Positron annihilation of vacancy-type defects in neutron-irradiated 4H-SiC

Journal of Nuclear Materials

Volumn 386-388, Issue C, 2009, Pages 169-172

  Xu, Q ^a   Yoshiie, T ^a   Okada, M ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING BEHAVIORS; ANTI-SITE DEFECTS; CARBON VACANCIES; DEFECT RECOVERIES; INTERSTITIALS; ISOCHRONAL ANNEALING; RANGE MIGRATIONS; RECOVERY STAGES; SILICON CLUSTERS; TEMPERATURE RANGES; VACANCY COMPLEXES; VACANCY-TYPE DEFECTS;

ANNEALING; CARBON CLUSTERS; DEFECTS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; SILICON CARBIDE; WEAR RESISTANCE;

VACANCIES;

EID: 64649085670     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2008.12.326     Document Type: Article

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