Microstructure of heavily neutron-irradiated SiC after annealing up to 1500 °C

Journal of Nuclear Materials

Volumn 386-388, Issue C, 2009, Pages 333-337

  Sawabe, Takashi ^a   Akiyoshi, Masafumi ^b   Ichikawa, Kohki ^a   Yoshida, Katsumi ^a   Yano, Toyohiko ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FAST NEUTRONS; LATTICE PARAMETERS; MACROSCOPIC LENGTHS; MICROSCOPIC DEFECTS; POST-IRRADIATION ANNEALING; VOID FORMATIONS;

GRAIN BOUNDARIES; LATTICE CONSTANTS; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING;

EID: 64749114287     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2008.12.322     Document Type: Article

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