Evolution of defects upon annealing in He-implanted 4H-SiC

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Leclerc, S ^a   Beaufort, M F ^a   Declmy A ^a   Barbot, J F ^a  

^a UNIVERSITÉ DE POITIERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BLOOD SUBSTITUTES; CONCENTRATION (PROCESS); ELECTROLYSIS; INERT GASES; IONS; POINT DEFECTS; RADIOACTIVITY; SILICON CARBIDE; SURFACE RELAXATION; VACANCIES;

BUBBLE CLUSTERS; DISLOCATION LOOPS; HELIUM CONCENTRATIONS; HELIUM IMPLANTATION; HELIUM IONS; HIGHER CONCENTRATIONS; ROOM TEMPERATURES; STRAIN PROFILING; SURFACE STRAINING;

HELIUM;

EID: 53149116657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2988262     Document Type: Article

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