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Journal of Electronic Materials

Volumn 37, Issue 2, 2008, Pages 157-160

Electrical switching in TlSbSe 2 chalcogenide semiconductors

(4) Kalkan, N a Yildirim, S a Ulutas, K a Deger, D a

a ISTANBUL UNIVERSITY (Turkey)

Author keywords

Negative differential resistance (NDR); Ternary crystals; Threshold type switching; TlSbSe 2

Indexed keywords

ELECTRICAL SWITCHING; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); TERNARY CRYSTALS; THRESHOLD-TYPE SWITCHING;

CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTOR MATERIALS; TERNARY SYSTEMS;

THALLIUM ALLOYS;

EID: 37249087940 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-007-0318-y Document Type: Article

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.