Conformal dielectric films on silicon nanowire arrays by plasma enhanced chemical vapor deposition

Journal of Nanoparticle Research

Volumn 10, Issue 6, 2008, Pages 955-963

  Fronheiser, J ^a   Balch, J ^a   Tsakalakos, L ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

Coating; Nanomanufacturing; Nanowire; PECVD; Silicon; Silicon oxide; Thin film

Indexed keywords

CLADDING (COATING); COATINGS; DEPOSITION RATES; DIELECTRIC FILMS; ELECTRIC WIRE; ELECTRON MICROSCOPY; ELECTRON OPTICS; IMAGING TECHNIQUES; METALLIZING; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; PLASMA (HUMAN); PLASMA DEPOSITION; PLASMAS; PRESSURE; PROTECTIVE COATINGS; SEMICONDUCTING SILICON; SILICON; SILICON COMPOUNDS; THICKNESS MEASUREMENT; THIN FILMS; VAPOR DEPOSITION; VAPORS;

BUSINESS MEDIA; CHEMICAL VAPORS; COATING THICKNESSES; DEPOSITION PRESSURES; HIGH-DENSITY; NANO WIRES; NANOWIRE ARRAYS; NANOWIRE LENGTH; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); PROCESS PARAMETERS; SILICON NANOWIRE ARRAY (SINW); SILICON OXIDES; SPRINGER (CO); THICKNESS GRADIENTS; THIN DIELECTRIC LAYERS; WIRE LENGTHS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

NANOWIRE; SILICON;

ARTICLE; CONFORMATION; ELECTRON MICROSCOPY; MATERIAL COATING; NANOTECHNOLOGY; PRIORITY JOURNAL; TEMPERATURE DEPENDENCE; VAPOR;

EID: 45849130154     PISSN: 13880764     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11051-008-9381-4     Document Type: Article

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