Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 317-319

  Akhtar, Saeed ^a   Tanaka, A ^a   Usami, K ^a   Tsuchiya, Y ^a   Oda, S ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Au Catalyst; Diameter distribution; Diffusion; Eutectic temperature; Low pressure chemical vapor deposition; Si nanowires; Synthesis

Indexed keywords

CATALYSIS; ELECTRIC WIRE; EUTECTICS; FILM GROWTH; FILM PREPARATION; GOLD; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; POWDERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; SYNTHESIS (CHEMICAL); THICK FILMS; THICKNESS MEASUREMENT; VAPORS;

AU CATALYST; DIAMETER DISTRIBUTION; EUTECTIC TEMPERATURE; SI NANOWIRES; SYNTHESIS;

CRYSTAL ORIENTATION;

EID: 54849417955     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.155     Document Type: Article

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