Growth of silicon nanowires by chemical vapor deposition: Approach by charged cluster model

Journal of Crystal Growth

Volumn 218, Issue 1, 2000, Pages 33-39

  Hwang, Nong M ^a,b   Cheong, Woo S ^c   Yoon, Duk Y ^c   Kim, Doh Y ^a  

^a Seoul National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; HYDROCHLORIC ACID; HYDROGEN; MATHEMATICAL MODELS; MOLYBDENUM; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR GROWTH; SILANES; SILICA; SILICON NITRIDE;

CHARGED CLUSTERS; NANOWIRES;

SEMICONDUCTING SILICON;

EID: 0034275395     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00543-1     Document Type: Article

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