Characterization and modeling of 1/f noise in Si-nanowire FETs: Effects of cylindrical geometry and different processing of oxides

IEEE Transactions on Nanotechnology

Volumn 10, Issue 3, 2011, Pages 417-423

  Baek, Rock Hyun ^a   Baek, Chang Ki ^b   Choi, Hyun Sik ^a   Lee, Jeong Soo ^a,c   Yeoh, Yun Young ^d   Yeo, Kyoung Hwan ^d   Kim, Dong Won ^d   Kim, Kinam ^d   Kim, Dae M ^b   Jeong, Yoon Ha ^a,c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Korea Institute for Advanced Study   (South Korea)

^c National Institute for Nanomaterials Technology (NINT)   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

1 f; Flicker noise; gate all around (GAA) FET; quantum wire; series resistance Rsd; twin silicon nanowire FET (TSNWFET)

Indexed keywords

1/F; FLICKER NOISE; GATE-ALL-AROUND; QUANTUM WIRE; SERIES RESISTANCE RSD; TWIN SILICON NANOWIRE FET (TSNWFET);

CYLINDERS (SHAPES); DRAIN CURRENT; MESFET DEVICES; POWER SPECTRAL DENSITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICONES; SPECTRAL DENSITY; SPURIOUS SIGNAL NOISE;

NANOWIRES;

EID: 79955879936     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2044188     Document Type: Article

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