TSNWFET for SRAM cell application: Performance variation and process dependency

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 38-39

  Sung, Dae Suk ^a   Yun, Young Yeoh ^a   Li, Ming ^a   Kyoung, Hwan Yeo ^a   Kim, Sung Han ^a   Kim, Dong Won ^a   Park, Donggun ^a   Lee, Won Seoung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

PERFORMANCE VARIATIONS; SRAM CELLS; VLSI TECHNOLOGIES;

TECHNOLOGY;

EID: 51949099572     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588555     Document Type: Conference Paper

References (6)

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3. M. J. M. Pelgrom et al., IEDM Tech., p. 915, 1998.
4. K. J. Kuhn, IEDM Tech., p. 471, 2007.
5. M. Li. et al., IEDM Tech., p. 899, 2007.
6. S. D. Suk et al., IEDM Tech., p. 891, 2007