Investigation on hot carrier reliability of gate-all-around twin Si nanowire field effect transistor

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 400-404

  Yun, Young Yeoh ^a   Sung, Dae Suk ^a   Li, Ming ^a   Kyoung, Hwan Yeo ^a   Kim, Dong Won ^a   Jin, Gyoyoung ^a   Oh, Kyoungsuk ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

GAA TSNWFET; GNOx; Hot carrier; ISSG; Nanowire channel size; Oxide thickness, gate length; RTO

Indexed keywords

GAA TSNWFET; GNOX; ISSG; OXIDE THICKNESS, GATE LENGTH; RTO;

FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GATE DIELECTRICS; GATES (TRANSISTOR); HOT CARRIERS; REGENERATORS; RELIABILITY; TECHNOLOGICAL FORECASTING;

NANOWIRES;

EID: 70449088986     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173286     Document Type: Conference Paper

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