Random telegraph noise in n-type and p-type silicon nanowire transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Yang, Seungwon ^a   Yeo, Kyoung Hwan ^b   Kim, Dong Won ^b   Seo, Kang Ill ^b   Park, Donggun ^b   Jin, Gyoyoung ^b   Oh, Kyungseok ^b   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MULTIPLE TRAPS; NANO WIRE STRUCTURES; P-TYPE SILICONS; RANDOM TELEGRAPH NOISE;

ELECTRON DEVICES; LOCATION; TELEGRAPH;

NANOWIRES;

EID: 64549154802     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796809     Document Type: Conference Paper

References (7)

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