Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors

Journal of Physics D: Applied Physics

Volumn 44, Issue 20, 2011, Pages

  Ribierre, J C ^a,b   Ghosh, S ^a   Takaishi, K ^a   Muto, T ^a   Aoyama, T ^a  

^a RIKEN   (Japan)

^b Ewha Womans University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; AMBIPOLAR CHARACTERISTICS; BALANCED ELECTRONS; CROSS-LINKED POLYIMIDES; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; FLUORINATED POLYMERS; GATE DIELECTRIC LAYERS; GOLD ELECTRODES; INSULATING POLYMER; LOW DIELECTRIC CONSTANTS; METAL ELECTRODES; OCTADECYLTRICHLOROSILANE; QUATERTHIOPHENE; SOLUTION-PROCESSED; TRANSFER CHARACTERISTICS;

CHROMIUM; DIELECTRIC MATERIALS; ELECTRODES; FLUORINE CONTAINING POLYMERS; GATE DIELECTRICS; GATES (TRANSISTOR); POLYIMIDES; POLYMER FILMS; POLYMERS; SILICON COMPOUNDS; TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79955846184     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/20/205102     Document Type: Article

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