Thickness-dependent in situ studies of trap states in pentacene thin film transistors

Applied Physics Letters

Volumn 96, Issue 8, 2010, Pages

  Fiebig, Matthias ^a   Beckmeier, Daniel ^a   Nickel, Bert ^a  

^a UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IN-SITU; IN-SITU STUDY; PENTACENE FILM; PENTACENE THIN FILM TRANSISTORS; PENTACENES; POSITIVE SHIFT; SUBMONOLAYER; THRESHOLD VOLTAGE SHIFTS; TRANSPORT MEASUREMENTS; TRAP STATE; VOLUME ELECTRONS;

DEPOSITION; FILM THICKNESS; HYSTERESIS; MONOLAYERS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 77749279705     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309685     Document Type: Article

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