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Volumn 85, Issue 11, 2011, Pages 1032-1036
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Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method
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Author keywords
Chemical vapor deposition; Gas flow ratio; Optical and compositional properties; SiNx:H
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Indexed keywords
BAND TAIL;
COMPOSITIONAL PROPERTIES;
CONSTANT FLOW;
ENHANCED GROWTH;
GAS FLOW RATIO;
HIGH FREQUENCY;
PEAK ENERGY;
SINX:H;
ABSORPTION SPECTROSCOPY;
CHEMICAL VAPOR DEPOSITION;
FLOW OF GASES;
PHOTOELECTRON SPECTROSCOPY;
PLASMA DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
REFRACTIVE INDEX;
SILICON NITRIDE;
X RAY PHOTOELECTRON SPECTROSCOPY;
AMORPHOUS FILMS;
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EID: 79955804747
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.vacuum.2011.03.012 Document Type: Article |
Times cited : (4)
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References (22)
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