High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD

Vacuum

Volumn 51, Issue 4, 1998, Pages 751-755

  Takagi, T ^a   Takechi, K ^b   Nakagawa, Y ^a   Watabe, Y ^a   Nishida, S ^b  

^a Canon ANELVA Technix Corporation   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ENERGY GAP; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THIN FILM TRANSISTORS;

OPTICAL BANDGAP;

AMORPHOUS FILMS;

EID: 0032310466     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00284-x     Document Type: Article

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