Low temperature-low hydrogen content silicon nitrides thin films deposited by PECVD using dichlorosilane and ammonia mixtures

Journal of Non-Crystalline Solids

Volumn 351, Issue 10-11, 2005, Pages 922-928

  Santana, G ^a   Fandino J ^a   Ortiz, A ^a   Alonso, J C ^a  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

DICHLOROSILANES; DIELECTRIC BREAKDOWN; MOLECULAR SPECIES; OPTICAL EMISSION SPECTRA;

AMMONIA; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELLIPSOMETRY; EMISSION SPECTROSCOPY; HYDROGEN; LOW TEMPERATURE EFFECTS; MIXTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; THIN FILMS;

SILICON NITRIDE;

EID: 17144372279     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.02.007     Document Type: Article

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