Optimization of SiNX:H films deposited by PECVD for reliability of electronic, microsystems and optical applications

Microelectronics Reliability

Volumn 50, Issue 8, 2010, Pages 1103-1106

  Herth, E ^a   Legrand, B ^a   Buchaillot, L ^a   Rolland, N ^a   Lasri, T ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; CHEMICAL SPECIFICATIONS; DEPOSITION PARAMETERS; DILUTION GAS; EFFECTS OF TEMPERATURE; ELECTRICAL PROPERTY; ELEMENTAL COMPOSITIONS; FILMS PROPERTIES; FUNDAMENTAL PROPERTIES; GASES MIXTURE; HYDROGEN CONTENTS; LOW TEMPERATURES; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL APPLICATIONS; REACTIVE SPECIES; REACTOR PLASMAS;

AMORPHOUS SILICON; DIELECTRIC FILMS; MICROSYSTEMS; OPTICAL CORRELATION; OPTICAL PROPERTIES; OPTIMIZATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; SILICON NITRIDE; TEMPERATURE;

ELECTRIC PROPERTIES;

EID: 77955416178     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.04.011     Document Type: Article

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