-
1
-
-
0028385147
-
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
-
Nakamura, S., Mukai, T. and Senoh, M., "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes", Appl. Phys. Lett. 64(13), 1687-1689 (1994).
-
(1994)
Appl. Phys. Lett.
, vol.64
, Issue.13
, pp. 1687-1689
-
-
Nakamura, S.1
Mukai, T.2
Senoh, M.3
-
2
-
-
0029377278
-
High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
-
Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S.-I., "High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes", Appl. Phys. Lett. 67(13), 1868-1871 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.67
, Issue.13
, pp. 1868-1871
-
-
Nakamura, S.1
Senoh, M.2
Iwasa, N.3
Nagahama, S.-I.4
-
3
-
-
34249332414
-
Status and future of high-power light-emitting diodes for solid-state lighting
-
DOI 10.1109/JDT.2007.895339
-
Krames, M. R., Shchekin, O. B., Mueler-Mach, R., Mueler, G. O., Zhou, L., Harbers, G. and Craford, M. G., "Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting", J. Display Technol., 3(2), 160-175 (2007). (Pubitemid 46808672)
-
(2007)
IEEE/OSA Journal of Display Technology
, vol.3
, Issue.2
, pp. 160-175
-
-
Krames, M.R.1
Shchekin, O.B.2
Mueller-Mach, R.3
Mueller, G.O.4
Zhou, L.5
Harbers, G.6
Craford, M.G.7
-
4
-
-
0141678466
-
Light extraction technologies for high-efficiency GaInN-LED devices
-
Härle, V., Hahn, B., Kaiser, S., Weimar, A., Eisert, D., Bader, S., Plössl, A. and Eberhard, F., "Light extraction technologies for high-efficiency GaInN-LED devices", Proc. SPIE 4996, 133-137 (2003).
-
(2003)
Proc. SPIE
, vol.4996
, pp. 133-137
-
-
Härle, V.1
Hahn, B.2
Kaiser, S.3
Weimar, A.4
Eisert, D.5
Bader, S.6
Plössl, A.7
Eberhard, F.8
-
5
-
-
33747510050
-
High performance thin-film flip-chip InGaN-GaN light-emitting diodes
-
Shchekin, O. B., Epler, J. E., Trottier, T. A., Margalith, T., Steigerwald, D. A., Holcomb, M. O., Martin, P. S. and Krames, M. R., "High performance thin-film flip-chip InGaN-GaN light-emitting diodes", Appl. Phys. Lett. 89(7), 071109 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, Issue.7
, pp. 071109
-
-
Shchekin, O.B.1
Epler, J.E.2
Trottier, T.A.3
Margalith, T.4
Steigerwald, D.A.5
Holcomb, M.O.6
Martin, P.S.7
Krames, M.R.8
-
6
-
-
0000867356
-
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
-
Chichibu, S. F., Marchand, H., Minsky, M. S., Keller, S., Fini, P. T., Ibbetson, J. P., Fleischer, S. B., Speck, J. S. J., Bowers, E., Hu, E., Mishra, U. K., DenBaars, S. P., Deguchi, T., Sota, T. and Nakamura, S., "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Appl. Phys. Lett. 74(10), 1460-1462 (1999). (Pubitemid 129582175)
-
(1999)
Applied Physics Letters
, vol.74
, Issue.10
, pp. 1460-1462
-
-
Chichibu, S.F.1
Marchand, H.2
Minsky, M.S.3
Keller, S.4
Fini, P.T.5
Ibbetson, J.P.6
Fleischer, S.B.7
Speck, J.S.8
Bowers, J.E.9
Hu, E.10
Mishra, U.K.11
DenBaars, S.P.12
Deguchi, T.13
Sota, T.14
Nakamura, S.15
-
7
-
-
0642275027
-
Spontaneous polarization and piezoelectric constants of III-V nitrides
-
Bernardini, F., Fiorentini, V. and Vanderbilt, D., "Spontaneous polarization and piezoelectric constants of III-V nitrides", Phys. Rev. B 56(16), R10024-R10027 (1997).
-
(1997)
Phys. Rev. B
, vol.56
, Issue.16
-
-
Bernardini, F.1
Fiorentini, V.2
Vanderbilt, D.3
-
8
-
-
0034895111
-
Accurate calculation of polarization-related quantities in semiconductors
-
Bernardini, F., Fiorentini, V. and Vanderbilt, D., "Accurate calculation of polarization-related quantities in semiconductors", Phys. Rev. B 63(19), 193201 (2001).
-
(2001)
Phys. Rev. B
, vol.63
, Issue.19
, pp. 193201
-
-
Bernardini, F.1
Fiorentini, V.2
Vanderbilt, D.3
-
9
-
-
0035881115
-
Nonlinear macroscopic polarization in III-V nitride alloys
-
Bernardini, F. and Fiorentini, V., "Nonlinear macroscopic polarization in III-V nitride alloys", Phys. Rev. B 64(8), 085207 (2001).
-
(2001)
Phys. Rev. B
, vol.64
, Issue.8
, pp. 085207
-
-
Bernardini, F.1
Fiorentini, V.2
-
10
-
-
0036925291
-
Band gap of hexagonal InN and InGaN alloys
-
DOI 10.100 2/1521-39 51(200 212)234:3<78 7::AID-PSS B787>3.0.CO;2-H
-
Davydov, V. Yu., Klochikhin, A. A., Emtsev, V. V., Kurdyukov, D. A., Ivanov, S. V., Vekshin,V. A., Bechstedt, F., Furthmüller, J., Aderhold, J., Graul, J., Mudryi, A. V., Harima, H., Hashomoto, A., Yamamoto, A. and Haller, E. E., "Band Gap of Hexagonal InN and InGaN Alloys", Phys. Stat. Solidi (b), 234(3), 787-795 (2002). (Pubitemid 36027899)
-
(2002)
Physica Status Solidi (B) Basic Research
, vol.234
, Issue.3
, pp. 787-795
-
-
Davydov, V.Yu.1
Klochikhin, A.A.2
Emtsev, V.V.3
Kurdyukov, D.A.4
Ivanov, S.V.5
Vekshin, V.A.6
Bechstedt, F.7
Furthmuller, J.8
Aderhold, J.9
Graul, J.10
Mudryi, A.V.11
Harma, H.12
Hashimoto, A.13
Yamamoto, A.14
Haller, E.E.15
-
11
-
-
69549148444
-
Is Auger recombination responsible for the efficiency rollover in IIInitride light-emitting diodes?
-
Bulashevich, K. A. and Karpov, S. Yu., "Is Auger recombination responsible for the efficiency rollover in IIInitride light-emitting diodes?", Phys. Stat. Solidi (c), 5(6), 2066-2069 (2008).
-
(2008)
Phys. Stat. Solidi (C)
, vol.5
, Issue.6
, pp. 2066-2069
-
-
Bulashevich, K.A.1
Karpov, S.Yu.2
-
12
-
-
35148864428
-
Auger recombination in InGaN measured by photoluminescence
-
DOI 10.1063/1.2785135
-
Shen, Y. C., Mueler, G. O., Watanabe, S., Gardner, N. F., Munkholm, A. and Krames, M. R., "Auger recombination in InGaN measured by photoluminescence", Appl. Phys. Lett. 91(14), 141101 (2007). (Pubitemid 47534188)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.14
, pp. 141101
-
-
Shen, Y.C.1
Mueller, G.O.2
Watanabe, S.3
Gardner, N.F.4
Munkholm, A.5
Krames, M.R.6
-
13
-
-
3543084457
-
3D Simulation and analysis of AlGaN/GaN ultraviolet light emitting diodes
-
Piprek, J., Katona, T., DenBaars, S. P. and Li, S., "3D Simulation and Analysis of AlGaN/GaN Ultraviolet Light Emitting Diodes", Proc. SPIE 5366, 127-136 (2004).
-
(2004)
Proc. SPIE
, vol.5366
, pp. 127-136
-
-
Piprek, J.1
Katona, T.2
Denbaars, S.P.3
Li, S.4
-
14
-
-
7444222801
-
Carrier injection and light emission in visible and UV nitride LEDs by modeling
-
DOI 10.1002/pssb.200405023
-
Karpov, S. Yu., Bulashevich, K. A., Zhmakin, I. A., Nestoklon, M. O., Mymrin, V. F. and Makarov, Yu. N., "Carrier injection and light emission in visible and UV nitride LEDs by modeling", Phys. Stat. Solidi (c), 241(12), 2668-2671 (2004). (Pubitemid 39443015)
-
(2004)
Physica Status Solidi (B) Basic Research
, vol.241
, Issue.12
, pp. 2668-2671
-
-
Karpov, S.Yu.1
Bulashevich, K.A.2
Zhmakin, I.A.3
Nestoklon, M.O.4
Mymrin, V.F.5
Makarov, Yu.N.6
-
15
-
-
0036698648
-
Physics of high-power InGaN/GaN lasers
-
Piprek, J. and Nakamura, S., "Physics of High-Power InGaN/GaN Lasers", IEE Proc. Optoelectronics 149(4), 145-151 (2002).
-
(2002)
IEE Proc. Optoelectronics
, vol.149
, Issue.4
, pp. 145-151
-
-
Piprek, J.1
Nakamura, S.2
-
16
-
-
0037449316
-
Dislocation effect on light emission efficiency in gallium nitride
-
Karpov, S. Yu. and Makarov, Yu. N., "Dislocation Effect on Light Emission Efficiency in Gallium Nitride", Appl. Phys. Lett. 81(23), 4721-4723 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.23
, pp. 4721-4723
-
-
Karpov, S.Yu.1
Makarov Yu., N.2
-
17
-
-
77957891166
-
Efficiency droop in nitride-based light-emitting diodes
-
Piprek, J., "Efficiency droop in nitride-based light-emitting diodes", Phys. Stat. Solidi (a), 207(10), 2217-2225 (2010).
-
(2010)
Phys. Stat. Solidi (A)
, vol.207
, Issue.10
, pp. 2217-2225
-
-
Piprek, J.1
-
18
-
-
67049171363
-
Auger recombination rates in nitrides from first principles
-
Delaney, K. T., Rinke, P., and Van de Walle, C. G., "Auger recombination rates in nitrides from first principles", Appl. Phys. Lett. 94, 191109 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 191109
-
-
Delaney, K.T.1
Rinke, P.2
Van De Walle, C.G.3
-
19
-
-
62949235867
-
Nonradiative recombination dynamics in InGaN/GaN LED defect system
-
Chernyakov, A. E., Sobolev, M. M., Ratnikov, V. V., Shmidt, N. M. and Yakimov, E. B., "Nonradiative recombination dynamics in InGaN/GaN LED defect system", Superlattices and Microstructures, 45(4/5), 301-307 (2009).
-
(2009)
Superlattices and Microstructures
, vol.45
, Issue.4-5
, pp. 301-307
-
-
Chernyakov, A.E.1
Sobolev, M.M.2
Ratnikov, V.V.3
Shmidt, N.M.4
Yakimov, E.B.5
-
20
-
-
73349121006
-
On the origin of IQE 'droop' in InGaN LEDs
-
Laubsch, A., Sabathil, M., Bergbauer, W., Strassburg, M., Lugauer, H., Peter, M., Lutgen, S., Linder, N., Streubel, K., Hader, J., Moloney, J. V., Pasenow, B. and Koch, S. W., "On the origin of IQE 'droop' in InGaN LEDs", Phys. Stat. Solidi (c), 6(S2), S913-S916 (2009).
-
(2009)
Phys. Stat. Solidi (C)
, vol.6
, Issue.S2
-
-
Laubsch, A.1
Sabathil, M.2
Bergbauer, W.3
Strassburg, M.4
Lugauer, H.5
Peter, M.6
Lutgen, S.7
Linder, N.8
Streubel, K.9
Hader, J.10
Moloney, J.V.11
Pasenow, B.12
Koch, S.W.13
-
21
-
-
78349285192
-
Effect of localized states on internal quantum efficiency of III-nitride LEDs
-
Karpov, S. Yu., "Effect of localized states on internal quantum efficiency of III-nitride LEDs", Phys. Stat. Solidi RRL, 4(11), 320-322 (2010.
-
(2010)
Phys. Stat. Solidi RRL
, vol.4
, Issue.11
, pp. 320-322
-
-
Karpov, S.Yu.1
-
22
-
-
7444222801
-
Carrier injection and light emission in visible and UV nitride LEDs by modeling
-
DOI 10.1002/pssb.200405023
-
Karpov, S. Yu., Bulashevich, K. A., Zhmakin, I. A., Nestoklon, M. O., Mymrin, V. F. and Makarov, Yu. N., "Carrier injection and light emission in visible and UV nitride LEDs by modeling", Phys. Stat. Solidi (b), 241(12), 2668-2671 (2004). (Pubitemid 39443015)
-
(2004)
Physica Status Solidi (B) Basic Research
, vol.241
, Issue.12
, pp. 2668-2671
-
-
Karpov, S.Yu.1
Bulashevich, K.A.2
Zhmakin, I.A.3
Nestoklon, M.O.4
Mymrin, V.F.5
Makarov, Yu.N.6
-
23
-
-
0037011482
-
Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
-
Jena, D., Heikman, S., Green, D., Buttari, D., Coffie, R., Xing, H., Keller, S., DenBaars, S., Speck, J. S. and Mishra, U. K., "Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys", Appl. Phys. Lett. 81(23), 4395-4397 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.23
, pp. 4395-4397
-
-
Jena, D.1
Heikman, S.2
Green, D.3
Buttari, D.4
Coffie, R.5
Xing, H.6
Keller, S.7
Denbaars, S.8
Speck, J.S.9
Mishra, U.K.10
-
24
-
-
79955765775
-
Control of electron leakage in III-nitride laser diodes by blocking layer design, using distributed polarization doping
-
Bulashevich, K. A., Mymrin, V. F. and Karpov, S. Yu., "Control of electron leakage in III-nitride laser diodes by blocking layer design, using distributed polarization doping", Proc. 3rd Asia-Pacific Workshop on Widegap Semiconductors, 192-1944 (2007).
-
(2007)
Proc. 3rd Asia-Pacific Workshop on Widegap Semiconductors
, pp. 192-1944
-
-
Bulashevich, K.A.1
Mymrin, V.F.2
Karpov, S.Yu.3
-
25
-
-
74849093968
-
Polarization-induced hole doping in wide-band- gap uniaxial semiconductor heterostructures
-
Simon, J., Protasenko, V., Lian, C., Xing, H. and Jena, D., "Polarization-Induced Hole Doping in Wide-Band- Gap Uniaxial Semiconductor Heterostructures", Science, 327(5961), 60-64 (2010).
-
(2010)
Science
, vol.327
, Issue.5961
, pp. 60-64
-
-
Simon, J.1
Protasenko, V.2
Lian, C.3
Xing, H.4
Jena, D.5
-
26
-
-
43249085859
-
Current spreading and thermal effects in blue LED dice
-
Bulashevich, K. A., Evstratov, I. Yu., Mymrin, V. F. and Karpov, S. Yu., "Current spreading and thermal effects in blue LED dice", Phys. Stat. Solidi (c) 4(1), 45-48 (2007).
-
(2007)
Phys. Stat. Solidi (C)
, vol.4
, Issue.1
, pp. 45-48
-
-
Bulashevich, K.A.1
Evstratov, I.Yu.2
Mymrin, V.F.3
Karpov, S.Yu.4
-
27
-
-
84974530514
-
Electro-Thermal modelling of high power light emitting diodes based on experimental device characterisation
-
Boston MA, October 9-11
-
López, T. and Margalith, T., "Electro-Thermal Modelling of High Power Light Emitting Diodes Based on Experimental Device Characterisation", Proc. Comsol Conference 2008, Boston MA, October 9-11 (2008).
-
(2008)
Proc. Comsol Conference 2008
-
-
López, T.1
Margalith, T.2
-
28
-
-
77955813461
-
Current crowding effect on light extraction efficiency of thin-film LEDs
-
Bogdanov, M. V., Bulashevich, K. A., Khokhlev, O. V., Evstratov, I. Yu., Ramm, M. S. and Karpov, S. Yu., "Current crowding effect on light extraction efficiency of thin-film LEDs", Phys. Stat. Solidi (c), 7(7/8), 2124- 2126 (2010).
-
(2010)
Phys. Stat. Solidi (C)
, vol.7
, Issue.7-8
, pp. 2124-2126
-
-
Bogdanov, M.V.1
Bulashevich, K.A.2
Khokhlev, O.V.3
Evstratov, I.Yu.4
Ramm, M.S.5
Karpov, S.Yu.6
-
29
-
-
79955787662
-
-
http://www.str-soft.com/products/SimuLED/
-
-
-
-
30
-
-
77955781179
-
Effect of ITO spreading layer on performance of blue light-emitting diodes
-
Bogdanov, M. V., Bulashevich, K. A., Khokhlev, O. V., Evstratov, I. Yu., Ramm, M. S. and Karpov, S. Yu., "Effect of ITO spreading layer on performance of blue light-emitting diodes", Phys. Stat. Solidi (c), 7(7/8), 2127-2129 (2010).
-
(2010)
Phys. Stat. Solidi (C)
, vol.7
, Issue.7-8
, pp. 2127-2129
-
-
Bogdanov, M.V.1
Bulashevich, K.A.2
Khokhlev, O.V.3
Evstratov, I.Yu.4
Ramm, M.S.5
Karpov, S.Yu.6
-
31
-
-
79955783628
-
Simulation of LEDs with phosphorescent media for the generation of white light
-
Ed. Piprek, J., WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
-
Linder, N., Eisert, D., Jermann, F. and Berben, D., "Simulation of LEDs with Phosphorescent Media for the Generation of White Light", in: Ed. Piprek, J., [Nitride Semiconductor Device: Principles and Simulation], WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 327-351 (2007).
-
(2007)
Nitride Semiconductor Device: Principles and Simulation
, pp. 327-351
-
-
Linder, N.1
Eisert, D.2
Jermann, F.3
Berben, D.4
-
32
-
-
56249115080
-
Tailoring of the color conversion elements in phosphor-converted high-power LEDs by optical simulations
-
Sommer, C., Wenzl, F.-P., Hartmann, P., Pachler, P., Schweighart, M., Tasch, S. and Leising, G., "Tailoring of the Color Conversion Elements in Phosphor-Converted High-Power LEDs by Optical Simulations", IEEE Photon. Technol. Lett., 20(9), 739-741 (2008).
-
(2008)
IEEE Photon. Technol. Lett.
, vol.20
, Issue.9
, pp. 739-741
-
-
Sommer, C.1
Wenzl, F.-P.2
Hartmann, P.3
Pachler, P.4
Schweighart, M.5
Tasch, S.6
Leising, G.7
-
33
-
-
70349311406
-
The effect of the phosphor particle sizes on the angular homogeneity of phosphor-converted high-power white LED light sources
-
Sommer, C., Krenn, J. R., Hartmann, P., Pachler, P., Schweighart, M., Tasch, S. and Wenzl, F.-P., "The Effect of the Phosphor Particle Sizes on the Angular Homogeneity of Phosphor-Converted High-Power White LED Light Sources", IEEE J. Selected Topics in Quantum Electronics, 15(4), 1181-1188 (2009).
-
(2009)
IEEE J. Selected Topics in Quantum Electronics
, vol.15
, Issue.4
, pp. 1181-1188
-
-
Sommer, C.1
Krenn, J.R.2
Hartmann, P.3
Pachler, P.4
Schweighart, M.5
Tasch, S.6
Wenzl, F.-P.7
-
34
-
-
58549100307
-
Optimizing the performance of remote phosphor LEDs
-
Zhu, Y. and Narendran, N., "Optimizing the Performance of Remote Phosphor LEDs", J. Light & Vis. Env. 32(2), 115-119 (2008).
-
(2008)
J. Light & Vis. Env.
, vol.32
, Issue.2
, pp. 115-119
-
-
Zhu, Y.1
Narendran, N.2
-
35
-
-
78650085129
-
Investigation of remote-phosphor white light-emitting diodes with multi- phosphor layers
-
Zhu, Y. and Narendran, N., "Investigation of Remote-Phosphor White Light-Emitting Diodes with Multi- Phosphor Layers", Jpn. J. Appl. Phys. 49(10), 100203 (2010).
-
(2010)
Jpn. J. Appl. Phys.
, vol.49
, Issue.10
, pp. 100203
-
-
Zhu, Y.1
Narendran, N.2
-
36
-
-
58149526270
-
Effect of phosphor geometry on the luminous efficiency of high-power white light-emitting diodes with excellent color rendering property
-
Won, Y.-H., Jang, H. S., Cho, K. W., Song, Y. S., Jeon, D. Y. and Kwon, H. K., "Effect of phosphor geometry on the luminous efficiency of high-power white light-emitting diodes with excellent color rendering property", Optics Lett. 34(1), 1-3 (2009).
-
(2009)
Optics Lett.
, vol.34
, Issue.1
, pp. 1-3
-
-
Won, Y.-H.1
Jang, H.S.2
Cho, K.W.3
Song, Y.S.4
Jeon, D.Y.5
Kwon, H.K.6
-
37
-
-
66849089012
-
Phosphors-conversion white light LED with omnidirectional reflector
-
Chen S.-W., Su J.-C., Lu C.-L., Song S.-F. and Chen, J.-H., "Phosphors-conversion white light LED with omnidirectional reflector", Proc. SPIE 7138, 71382D (2008).
-
(2008)
Proc. SPIE 7138
-
-
Chen, S.-W.1
Su, J.-C.2
Lu, C.-L.3
Song, S.-F.4
Chen, J.-H.5
-
38
-
-
33745514492
-
Quantitative assessment of diffusivity and specularity of surface-textured reflectors for light extraction in light-emitting diodes
-
DOI 10.1116/1.2194924, 062604JVA
-
Xi, Y. Li, X., Kim, J. K., Mont, F., Gessmann, Th., Luo, H. and Schubert, E. F., "Quantitative assessment of diffusivity and specularity of surface-textured reflectors for light extraction in light-emitting diodes", J. Vac. Sci. Technol. A 24(4), 1627-1630 (2006). (Pubitemid 43959217)
-
(2006)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.24
, Issue.4
, pp. 1627-1630
-
-
Xi, Y.1
Li, X.2
Kim, J.K.3
Mont, F.4
Gessmann, Th.5
Luo, H.6
Schubert, E.F.7
-
39
-
-
57149141407
-
Study of phosphor thermal-isolated packaging technologies for high-power white light-emitting diodes
-
Fan, B., Wu, H., Zhao, Y., Xian, Y. and Wang, G., "Study of Phosphor Thermal-Isolated Packaging Technologies for High-Power White Light-Emitting Diodes", IEEE Photon. Technol. Lett. 19(15), 1121-1123 (2007).
-
(2007)
IEEE Photon. Technol. Lett.
, vol.19
, Issue.15
, pp. 1121-1123
-
-
Fan, B.1
Wu, H.2
Zhao, Y.3
Xian, Y.4
Wang, G.5
-
40
-
-
79955766340
-
Effect of temperature and current variation on the color quality of white light-emitting diodes
-
Khokhlev, O. V., Bord, O. V., Bogdanov, M. V., Bulashevich, K. A., Ramm, M. S., Evstratov I. Yu. and Karpov, S. Yu., "Effect of Temperature and Current Variation on the Color Quality of White Light-Emitting Diodes", Proc. 12th Int. Symp. On the Science and Technology of Light Sources & 3rd Int. Conf. on White LEDs and Solid State Lighting, FAST-LS Ltd., Sheffield, 29-30 (2010).
-
(2010)
Proc. 12th Int. Symp. on the Science and Technology of Light Sources & 3rd Int. Conf. on White LEDs and Solid State Lighting, FAST-LS Ltd., Sheffield
, pp. 29-30
-
-
Khokhlev, O.V.1
Bord, O.V.2
Bogdanov, M.V.3
Bulashevich, K.A.4
Ramm, M.S.5
Evstratov, I.Yu.6
Karpov, S.Yu.7
-
41
-
-
56749098314
-
Precise optical modeling for silicate-based white LEDs
-
Sun, C.-C., Chen, C.-Y, He, H.-Y, Chen, C.-C., Chien, W.-T., Lee, T.-X. and Yang, T.-H., "Precise optical modeling for silicate-based white LEDs", Optics Express 16(24), 20060-20066 (2008).
-
(2008)
Optics Express
, vol.16
, Issue.24
, pp. 20060-20066
-
-
Sun, C.-C.1
Chen, C.-Y.2
He, H.-Y.3
Chen, C.-C.4
Chien, W.-T.5
Lee, T.-X.6
Yang, T.-H.7
-
42
-
-
79955775054
-
Injection characteristics of polar and nonpolar multiple-QW structures and active region ballistic overshoot
-
Kisin, M. V. and El-Ghoroury, H. S., "Injection characteristics of polar and nonpolar multiple-QW structures and active region ballistic overshoot", accepted in Phys. Stat. Solidi (c)
-
Accepted in Phys. Stat. Solidi (C)
-
-
Kisin, M.V.1
El-Ghoroury, H.S.2
-
43
-
-
29144507317
-
0.8N/GaN system and its effect on the laser-excited photoluminescence spectrum
-
DOI 10.1134/1.2140315
-
Jacobson, M. A., Nelson, D. K., Konstantinov, O. V. and Matveentsev, A. V., "The tail of localized states in the band gap of the quantum well in the In0.2Ga0.8N/GaN system and its effect on the laser-excited photoluminescence spectrum", Semiconductors, 39(12), 1410-1414 (2005). (Pubitemid 41795366)
-
(2005)
Semiconductors
, vol.39
, Issue.12
, pp. 1410-1414
-
-
Jacobson, M.A.1
Nelson, D.K.2
Konstantinov, O.V.3
Matveentsev, A.V.4
-
44
-
-
0037425074
-
Optical cavity effects in InGaN/GaN quantum-wellheterostructure flip-chip light-emitting diodes
-
Shen, Y. C., Wierer, J. J., Krames, M. R., Ludowise, M. J., Misra, M. S., Ahmed, F., Kim, A. Y., Mueller, G. O., Bhat, J. C., Stockman, S. A. and P. S. Martin, "Optical cavity effects in InGaN/GaN quantum-wellheterostructure flip-chip light-emitting diodes", Appl. Phys. Lett. 82(14), 2221-2223 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.82
, Issue.14
, pp. 2221-2223
-
-
Shen, Y.C.1
Wierer, J.J.2
Krames, M.R.3
Ludowise, M.J.4
Misra, M.S.5
Ahmed, F.6
Kim, A.Y.7
Mueller, G.O.8
Bhat, J.C.9
Stockman, S.A.10
Martin, P.S.11
-
45
-
-
0031271221
-
0.9N quantum well structure
-
Kisielowski, C., Liliental-Weber, Z. and Nakamura, S., "Atomic Scale Indium Distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N Quantum Well Structure", Jpn. J. Appl. Phys. Pt.1, 36(11), 6932-6936 (1997). (Pubitemid 127572252)
-
(1997)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.36
, Issue.11
, pp. 6932-6936
-
-
Kisielowski, C.1
Liliental-Weber, Z.2
Nakamura, S.3
-
46
-
-
84875103553
-
Indium segregation in MOVPE grown InGaN-based heterostructures
-
Talalaev, R. A., (a), Karpov, S. Yu., Evstratov, I. Yu. and Makarov, Yu. N., "Indium Segregation in MOVPE Grown InGaN-Based Heterostructures", Phys. Stat. Solidi (c) 0(1), 311-314 (2002).
-
(2002)
Phys. Stat. Solidi (C)
, Issue.1
, pp. 311-314
-
-
Talalaev, R.A.1
Karpov, S.Yu.2
Evstratov, I.Yu.3
Makarov, Yu.N.4
-
47
-
-
20944434655
-
Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency
-
Köhler, K., Stephan, T., Perona, A., Wiegert, J., Maier, M., Kunzer, M. and Wagner, J., "Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency", J. Appl. Phys. 97(10), 104914 (2005).
-
(2005)
J. Appl. Phys.
, vol.97
, Issue.10
, pp. 104914
-
-
Köhler, K.1
Stephan, T.2
Perona, A.3
Wiegert, J.4
Maier, M.5
Kunzer, M.6
Wagner, J.7
-
48
-
-
33745020476
-
Mg doping profile in III-N light emitting diodes in close proximity to the active region
-
DOI 10.1002/pssa.200565125
-
Köhler, K., Perona, A., Maier, M., Wiegert, J., Kunzer, M. and Wagner, J., "Mg doping profile in III-N light emitting diodes in close proximity to the active region", Phys. Stat. Solidi (a) 203(7),1802-1805 (2006). (Pubitemid 43875376)
-
(2006)
Physica Status Solidi (A) Applications and Materials
, vol.203
, Issue.7
, pp. 1802-1805
-
-
Kohler, K.1
Perona, A.2
Maier, M.3
Wiegert, J.4
Kunzer, M.5
Wagner, J.6
-
49
-
-
77955729915
-
Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity
-
Durnev, M. V., Omelchenko, A. V., Yakovlev, E. V., Evstratov, I. Yu. and Karpov, S. Yu., "Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity", Appl. Phys. Lett. 97(5), 051904 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, Issue.5
, pp. 051904
-
-
Durnev, M.V.1
Omelchenko, A.V.2
Yakovlev, E.V.3
Evstratov, I.Yu.4
Karpov, S.Yu.5
|