Indium segregation in MOVPE grown InGaN-based heterostructures

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 311-314

  Talalaev, R A ^a   Karpov, S Yu ^a   Evstratov, I Yu ^a   Makarov, Yu N ^b  

^a SOFT IMPACT LTD   (Russian Federation)

^b STR Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; GROWTH KINETICS; III-V SEMICONDUCTORS; INDIUM; NITRIDES; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM COMPOSITION; BARRIER LAYERS; DETAILED MODELING; GAN-QUANTUM WELLS; GROWTH CONDITIONS; INDIUM SEGREGATION; MODEL PREDICTION; TRANSIENT PROCESS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84875103553     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390051     Document Type: Conference Paper

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