Mg doping profile in III-N light emitting diodes in close proximity to the active region

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1802-1805

  Kohler K ^a   Perona, A ^a   Maier, M ^a   Wiegert, J ^a   Kunzer, M ^a   Wagner, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BARRIERS; GROWTH PARAMETERS; GROWTH TEMPERATURE; PRECURSORS;

DOPING (ADDITIVES); ELECTROLUMINESCENCE; MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 33745020476     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565125     Document Type: Article

References (7)

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7. It should be noted that a similar shoulder in the Mg depth profile due to Mg back diffusion, as seen in the structure without AlGaN where GaInN QWs are still present, is also observed in plain GaN:Mg layers with a nominally step-function-like Mg doping profile.