Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Kohler K ^a   Stephan, T ^a   Perona, A ^a   Wiegert, J ^a   Maier, M ^a   Kunzer, M ^a   Wagner, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANTS; ELECTRON-BLOCKING BARRIERS; GROWTH PARAMETERS; GROWTH TEMPERATURES;

DIFFUSION; ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; GROWTH KINETICS; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY;

DOPING (ADDITIVES);

EID: 20944434655     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1901836     Document Type: Article

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