In situ photoluminescence control during fabrication of SiO2/InP structures

Journal of the Electrochemical Society

Volumn 144, Issue 6, 1997, Pages 2086-2095

  Lambrinos, M F ^a,b   Besland, M P ^a   Gagnaire, A ^a   Louis, P ^a   Callard, S ^a   Joseph, J ^a  

^a ECOLE CENTRALE DE LYON   (France)

^b UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; INTERFACES (MATERIALS); OPTICAL VARIABLES MEASUREMENT; PASSIVATION; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031167312     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837746     Document Type: Article

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