The influence of chemical treatment and thermal annealing on Al x Ga 1-x N surfaces: An XPS study

Applied Surface Science

Volumn 252, Issue 14, 2006, Pages 5189-5196

  Boudjelida, B ^a   Simmonds, M C ^a   Gee, I ^a   Clark, S A ^a  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

Author keywords

AlGaN; Annealing; Fermi level pinning; Surface

Indexed keywords

ANNEALING; BAND STRUCTURE; DEFECTS; STOICHIOMETRY; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

ALGAN; FERMI LEVEL PINNING; SURFACE CONCENTRATION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33747462873     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.07.056     Document Type: Article

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