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Volumn 80, Issue 5, 1996, Pages 3100-3109

Optimized SiO2/InP structures prepared by electron cyclotron resonance plasma

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0012749645     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363120     Document Type: Article
Times cited : (12)

References (24)
  • 1
    • 0001469496 scopus 로고
    • H. Hasegawa, M. Akazawa, H. Ishii, and K. Matsuzaki J. Vac. Sci. Technol. B 7, 870 (1989); H. Hasegawa, Passivation of Metals and Semiconductors, 7th International Symposium on Passivity, edited by K. E. Heusler (MRS, Pittsburgh, PA, 1995), Vols. 185-188, p. 213.
    • (1989) J. Vac. Sci. Technol. B , vol.7 , pp. 870
    • Hasegawa, H.1    Akazawa, M.2    Ishii, H.3    Matsuzaki, K.4
  • 2
    • 6144290107 scopus 로고
    • 7th International Symposium on Passivity, edited by K. E. Heusler MRS, Pittsburgh, PA
    • H. Hasegawa, M. Akazawa, H. Ishii, and K. Matsuzaki J. Vac. Sci. Technol. B 7, 870 (1989); H. Hasegawa, Passivation of Metals and Semiconductors, 7th International Symposium on Passivity, edited by K. E. Heusler (MRS, Pittsburgh, PA, 1995), Vols. 185-188, p. 213.
    • (1995) Passivation of Metals and Semiconductors , vol.185-188 , pp. 213
    • Hasegawa, H.1
  • 12
    • 85033014615 scopus 로고    scopus 로고
    • unpublished
    • M. P. Besland et al. (unpublished).
    • Besland, M.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.