Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Zhu, Jihong ^a   Wang, Liangji ^a   Zhang, Shuming ^a   Wang, Hui ^a   Zhao, Degang ^a   Zhu, Jianjun ^a   Liu, Zongshun ^a   Jiang, Desheng ^a   Yang, Hui ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING MASKS; INGAN/GAN; LIGHT-EXTRACTION EFFICIENCY; MULTIPLE QUANTUM WELLS; NANO-PILLAR ARRAYS; NANOPILLAR STRUCTURES; NANOPILLARS; RAY TRACE METHOD; SELF-ASSEMBLED NANODOTS;

EFFICIENCY; ETCHING; EXTRACTION; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79955728987     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3580477     Document Type: Article

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