The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

Journal of Physics D: Applied Physics

Volumn 42, Issue 23, 2009, Pages

  Zhu, J H ^a   Wang, L J ^a   Zhang, S M ^a   Wang, H ^a   Zhao, D G ^a   Zhu, J J ^a   Liu, Z S ^a   Jiang, D S ^a   Qiu, Y X ^b   Yang, H ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BEFORE AND AFTER; BLUE SHIFT; DOUBLE PEAK; EMISSION PEAKS; INGAN/GAN; LOW TEMPERATURE PHOTOLUMINESCENCE; MULTIPLE QUANTUM-WELL STRUCTURES; NANOPILLAR; QUANTUM WELL LAYERS; SPATIALLY RESOLVED; STRAIN-RELAXED;

FABRICATION; PHOTOLUMINESCENCE; STRAIN CONTROL; STRAIN RELAXATION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 70450189830     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/23/235104     Document Type: Article

References (17)

1. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H and Sugimoto Y 1996 Japan. J. Appl. Phys. 35 L74
2. Chen H S, Yeh D M, Lu Y C, Chen C Y, Huang C F, Tang T Y, Yang C C, Wu C S and Chen C D 2006 Nanotechnology 17 1454
3. Chang H J, Hsieh Y P, Chen T T, Chen Y F, Liang C T, Lin T Y, Tseng S C and Chen L C 2007 Opt. Express 15 9357
4. Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H and Akasaki I 1997 Japan. J. Appl. Phys. Part 2 36 L382
5. Wang T, Nakagawa D, Wang J, Sugahara T and Sakai S 1998 Appl. Phys. Lett. 73 3571
6. Pozina G, Bergman J P, Monwmar B, Takeuchi T, Amano H and Akasaki I 2000 Phys. Status Solidi a 180 85
7. Chen Z Z, Liu P, Qi S L, Xu K, Qin Z X, Tong Y Z, Yu T J, Hu X D and Zhang G Y 2007 J. Cryst. Growth 298 731
8. Tran C A et al 1998 J. Cryst. Growth 195 397
9. Chiu C H, Kuo S Y, Lo M H, Ke C C, Wang T C, Lee Y T, Kuo H C, Lu T C and Wang S C 2009 J. Appl. Phys. 105 063105
10. Narukawa Y, Kawakami Y, Fujita Sz, Fujita Sg and Nakamura S 1997 Phys. Rev. B 55 R1938
11. Yu T J, Kang X N, Qin Z X, Chen Z Z, Yang Z J, Hu X D and Zhang G Y 2006 Chin. J. Semicond. 27 20
12. Kim D J, Moon Y T, Song K M, Choi C J, Ok Y W, Seong T Y and Park S J 2000 J. Cryst. Growth 221 368
13. Bai J, Wang T and Sakai S 2001 J. Appl. Phys. 90 1740
14. Neufeld C J, Schaake C, Grundmann M, Fichtenbaum N A, Keller S and Mishra U K 2007 Phys. Status Solidi c 4 1605
15. Zhu J H et al 2008 Chin. Phys. Lett. 25 3485
16. Tang Y B et al 2008 Nano Lett. 8 4191
17. Jiang D S et al 2008 J. Mater. Sci.: Mater. Electron. 19 S58