Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 380-385

  Bonafos, C ^a,b   Garrido, B ^a   Lopez, M ^a   Perez Rodriguez, A ^a   Morante, J R ^a   Kihn, Y ^a   Ben Assayag, G ^a   Claverie, A ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; ELECTRON ENERGY LOSS SPECTROSCOPY; GERMANIUM; ION IMPLANTATION; PARTICLE SIZE ANALYSIS; PRECIPITATION (CHEMICAL); REACTION KINETICS; SECONDARY ION MASS SPECTROMETRY; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

OSTWALD RIPENING;

NANOSTRUCTURED MATERIALS;

EID: 0033896305     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00411-0     Document Type: Article

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