Surface tension and its temperature coefficient of molten silicon at different oxygen potentials

Langmuir

Volumn 18, Issue 6, 2002, Pages 2054-2062

  Yuan, Zhang Fu ^a   Mukai, Kusuhiro ^b   Huang, Wen Lai ^a  

^a INSTITUTE OF PROCESS ENGINEERING   (China)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; MOLECULAR VIBRATIONS; PARTIAL PRESSURE; SILICON; THIN FILMS;

MOLTEN SILICON;

SURFACE TENSION;

EID: 0037133903     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la0112920     Document Type: Article

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