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Volumn 98, Issue 17, 2011, Pages

Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

(9) Seravalli, L a Trevisi, G a Frigeri, P a Rivas, D b Munoz Matutano G b Suarez I b Aln B b Canet, J b Martinez Pastor J P b

a IMEM CNR (Italy)

b UNIVERSITY OF VALENCIA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CONFINING LAYERS; DOT DENSITY; EMISSION WAVELENGTH; GAAS SUBSTRATES; INAS; INAS/INGAAS; LONG WAVELENGTH; LOW DENSITY; LOW TEMPERATURES; METAMORPHIC IN; OPTIMAL GROWTH; QUANTUM DOT; SINGLE QUANTUM DOT; SINGLE-PHOTON SOURCE; TELECOM; TELECOM WAVELENGTHS;

ATOMIC FORCE MICROSCOPY; GALLIUM; GALLIUM ALLOYS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79955685140 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3584132 Document Type: Article

Times cited : (58)

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