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Volumn 92, Issue 21, 2008, Pages

1.59 μm room temperature emission from metamorphic InAsInGaAs quantum dots grown on GaAs substrates

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GROWTH RATE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

EID: 44449098830     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937095     Document Type: Article
Times cited : (55)

References (23)
  • 20
    • 0026413224 scopus 로고
    • ALMBE is a variant of MBE where group-III and group-V species impinge on the substrate alternatively in submonolayer amounts per cycle..
    • ALMBE is a variant of MBE where group-III and group-V species impinge on the substrate alternatively in submonolayer amounts per cycle. F. Briones and A. Ruiz, J. Cryst. Growth 111, 194 (1991).
    • (1991) J. Cryst. Growth , vol.111 , pp. 194
    • Briones, F.1    Ruiz, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.