Optical and structural properties of InAs quantum dot arrays grown in an InxGa1-xAs matrix on a GaAs substrate

Semiconductors

Volumn 38, Issue 7, 2004, Pages 833-836

  Kryzhanovskaya, N V ^a   Gladyschev, A G ^a   Blokhin, S A ^a   Musikhin, G Yu ^a   Zhukov, A E ^a   Maksimov, M V ^a   Zakharov, N D ^b   Tsatsul'nikov, A F ^a   Ledentsov, N N ^c   Werner, P ^b   Guffart, F ^c   Bimberg, D ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4544334866     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1777610     Document Type: Article

References (19)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999).
2. V. A. Shchukin, N. N. Ledentsov, and D. Bimberg, Epitaxy of Nanostructures (Springer, Berlin, 2004).
3. V. A. Odnoblyudov, A. Yu. Egorov, A. R. Kovsh, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) (in press).
4. A. E. Zhukov, S. S. Mikhrin, E. S. Semenova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1143 (2003) [Semiconductors 37, 1119 (2003)].
5. A. E. Zhukov, S. S. Mikhrin, E. S. Semenova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1143 (2003) [Semiconductors 37, 1119 (2003)].
6. A. E. Zhukov, A. P. Vasil'ev, A. R. Kovsh, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1461 (2003) [Semiconductors 37, 1411 (2003)].
7. A. E. Zhukov, A. P. Vasil'ev, A. R. Kovsh, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1461 (2003) [Semiconductors 37, 1411 (2003)].
8. N. N. Ledentsov, F. R. Kovsh, A. E. Zhukov, et al., Electron. Lett. 39, 1126 (2003).
9. N. N. Ledentsov, U.S. Patent No. 6,653,166 (2003).
10. L. V. Asryan, M. Grundmann, N. N. Ledentsov, et al., IEEE J. Quantum Electron. 37, 418 (2001).
11. F. Guffarth, R. Heitz, A. Schliwa, et al., Phys. Rev. B 64, 85305 (2001).
12. B. V. Volovik, A. F. Tsatsul'nikov, D. A. Bedarev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 990 (1999) [Semiconductors 33, 901 (1999)].
13. B. V. Volovik, A. F. Tsatsul'nikov, D. A. Bedarev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 990 (1999) [Semiconductors 33, 901 (1999)].
14. M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, et al., Phys. Rev. B 62, 16671 (2000).
15. O. Stier, M. Grundmann, and D. Bimberg, Phys. Rev. B 59, 5688 (1999).
16. N. N. Ledentsov, M. Grundmann, N. Kirstaedter, et al., in Proceedings of 22nd International Conference on Physics of Semiconductors, Vancouver, Canada, 1994, Ed. by D. J. Lockwood (World Sci., Singapore, 1995), Vol. 3, p. 1855.
17. R. Heitz, O. Stier, I. Mukhametzhanov, et al., Phys. Rev. B 62, 11017 (2000).
18. N. N. Ledentsov, M. Grundmann, N. Kirstaedter, et al., in Proceedings of 7th International Conference on Modulated Semiconductor Structures (Madrid, 1995); Solid-State Electron. 40, 785 (1996).
19. N. N. Ledentsov, M. Grundmann, N. Kirstaedter, et al., in Proceedings of 7th International Conference on Modulated Semiconductor Structures (Madrid, 1995); Solid-State Electron. 40, 785 (1996).