Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping

New Journal of Physics

Volumn 13, Issue , 2011, Pages

  Gomis Bresco, Jordi ^a,d   Muñoz Matutano, Guillermo ^a   Martínez Pastor, Juan ^a   Alén, Benito ^b   Seravalli, Luca ^c   Frigeri, Paola ^c   Trevisi, Giovanna ^c   Franchi, Secondo ^c  

^a UNIVERSITY OF VALENCIA   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^c IMEM CNR   (Italy)

^d CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BIEXCITON; IMPURITY LEVEL; INAS/GAAS; INAS/GAAS QUANTUM DOTS; JOINT POWER; NEGATIVE CHARGE; NEGATIVE TRION; NEUTRAL EXCITONS; OPTICAL EXCITATIONS; POPULATION MODEL; QUANTUM DOTS; RECOMBINATION DYNAMICS; SINGLE QD; TIME-INTEGRATED PHOTOLUMINESCENCE; TIME-RESOLVED;

EXCITONS; PHOTOEXCITATION; PUMPS; SEMICONDUCTOR QUANTUM DOTS;

OPTICAL PUMPING;

EID: 79952272683     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/13/2/023022     Document Type: Article

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