Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes

Applied Physics Letters

Volumn 91, Issue 16, 2007, Pages

  Alonso Gonzalez P ^a   Aln B ^a   Fuster, D ^a   Gonzalez Y ^a   Gonzalez L ^a   Martinez Pastor J ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b UNIVERSITY OF VALENCIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DROPS; EPITAXIAL GROWTH; INDIUM ARSENIDE; NANOSTRUCTURES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; STRUCTURAL PROPERTIES;

EMISSION PROPERTIES; GROWTH CONDITIONS; NANOHOLES; OPTICAL QUALITY; QUANTUM DOT MORPHOLOGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 35548967974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2799736     Document Type: Article

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