Low density InAs/(In)GaAs quantum dots emitting at long wavelengths

Nanotechnology

Volumn 20, Issue 41, 2009, Pages

  Trevisi, G ^a   Seravalli, L ^a   Frigeri, P ^a   Franchi, S ^a  

^a IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONFINING LAYERS; CRITICAL THICKNESS; FULL WIDTHS AT HALF MAXIMUMS; GAAS; GROWTH PARAMETERS; HIGH GROWTH TEMPERATURES; LONG WAVELENGTH; LONG-WAVELENGTH EMISSIONS; LOW DENSITY; LOW GROWTH RATE; MORPHOLOGICAL PROPERTIES; PLASTIC RELAXATION; QUANTUM DOT; QUANTUM DOT EMISSION; QUANTUM DOT STRUCTURE; QUANTUM DOTS EMITTING; QUANTUM-DOT SIZE; RED SHIFT;

CRYSTAL GROWTH; DESORPTION; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT; GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMICAL COMPOSITION; CHEMICAL STRUCTURE; DESORPTION; GROWTH RATE; PRIORITY JOURNAL; SINGLE PHOTON EMISSION COMPUTER TOMOGRAPHY; SPECTRAL SENSITIVITY; TEMPERATURE MEASUREMENT; CHEMISTRY;

ARSENICALS; GALLIUM; INDIUM; QUANTUM DOTS;

EID: 70349676073     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/41/415607     Document Type: Article

References (22)

1. Shields A J 2007 Nat. Photon. 1 215
2. Henini M 2008 Handbook of Self-Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics (Amsterdam: Elsevier)
3. Joyce P B, Krzyzewski T J, Bell G R, Jones T S, Malik S, Childs D and Murray R 2000 Phys. Rev. B 62 10891
4. Dubrovskii V G et al 2004 J. Cryst. Growth 267 47
5. Nakata Y, Mukai K, Sugawara M, Ohtsubo K, Ishikawa H and Yokoyama N 2000 J. Cryst. Growth 208 93
6. Alloing B, Zinoni C, Zwiller V, Li L H, Monat C, Gobet M, Buchs G, Fiore A, Pelucchi E and Kapon E 2005 Appl. Phys. Lett. 86 101908
7. Alloing B, Zinoni C, Li L H, Fiore A and Patriarche G 2007 J. Appl. Phys. 101 024918
8. Huang S, Niu Z, Ni H, Xiong Y, Zhan F, Fang Z and Xia J 2007 J. Cryst. Growth 301/302 751
9. Joyce P B, Krzyzewski T J, Bell G R, Joyce B A and Jones T S 1998 Phys. Rev. B 58 R15981
10. Leonard D, Pond K and Petroff P M 1994 Phys. Rev. B 50 11687
11. Colocci M, Bogani F, Carraresi L, Mattolini R, Bosacchi A, Franchi S, Frigeri P, Rosa-Clot M and Taddei S 1997 Appl. Phys. Lett. 70 3140
12. Li L, Chauvin N, Patriarche G, Alloing B and Fiore A 2008 J. Appl. Phys. 104 083508
13. Ohmori M, Kawazu T, Torii K, Takahashi T and Sakaki H 2008 Appl. Phys. Express 1 061202
14. Seravalli L, Minelli M, Frigeri P, Franchi S, Guizzetti G, Patrini M, Ciabattoni T and Geddo M 2007 J. Appl. Phys. 101 024313
15. Seravalli L, Frigeri P, Trevisi G and Franchi S 2008 Appl. Phys. Lett. 92 213104
16. Karachinsky L Ya et al 2005 Semiconductors 39 1415
17. Liu H Y, Qiu Y, Lin C Y, Walther T and Cullis G 2008 Appl. Phys. Lett. 92 111906
18. Mi Z, Bhattacharya P and Yang J 2006 Appl. Phys. Lett. 89 153109
19. Semenova E S, Hostein R, Patriarche G, Mauguin O, Largeau L, Robert-Philip I, Beveratos A and Lematre A 2008 J. Appl. Phys. 103 103533
20. Bosacchi A, Frigeri P, Franchi S, Allegri P and Avanzini V 1997 J. Cryst. Growth 175 771
21. Markiewicz P and Goh M C 1995 J. Vac. Sci. Technol. B 13 1115
22. Heyn Ch 2001 Phys. Rev. B 64 165306