The effects of relaxed InGaAs virtual substrates on the formation of self-assembled InAs quantum dots

Semiconductor Science and Technology

Volumn 23, Issue 5, 2008, Pages

  Thet, C C ^a   Sanorpim, S ^a   Panyakeow, S ^a   Kanjanachuchai, S ^a  

^a CHULALONGKORN UNIVERSITY   (Thailand)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SUBSTRATES; X RAY DIFFRACTION;

UNDERLYING SURFACE UNDULATION; VIRTUAL SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 43149116326     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/5/055007     Document Type: Article

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