Metamorphic 1.5 νm-range quantum dot lasers on a GaAs substrate

Semiconductor Science and Technology

Volumn 21, Issue 5, 2006, Pages 691-696

  Karachinsky, L Ya ^a,b   Kettler, T ^b   Novikov, I I ^a   Shernyakov, Yu M ^a   Gordeev, N Yu ^a   Maximov, M V ^a   Kryzhanovskaya, N V ^a   Zhukov, A E ^a   Semenova, E S ^a   Vasil'ev, A P ^a   Ustinov, V M ^a   Fiol, G ^b   Kuntz, M ^b   Lochmann, A ^b   Schulz, O ^b   Reissmann, L ^b   Posilovic, K ^b   Kovsh, A R ^c   Mikhrin, S S ^c   Shchukin, V A ^a,b,c   Ledentsov, N N ^a,b,c   Bimberg, D ^b   more..

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c NL Nanosemiconductor GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT DENSITY; HEAT SINKS; HEATING; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

CONTINUOUS WAVE (CW); DEFECT REDUCTION TECHNIQUE; MODULATION BANDWIDTH; NARROW STRIPE LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33645687400     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/5/022     Document Type: Article

References (28)

1. Bimberg D 2005 J. Phys. D: Appl. Phys. 38 2055
2. Ledentsov N N 2002 IEEE J. Sel. Top. Quantum Electron. 8 1015
3. Park G, Shchekin O B, Huffaker D L and Deppe D G 2000 IEEE Photonics Technol. Lett. 12 230
4. Grundmann M and Bimberg D 1997 Japan. J. Appl. Phys. 36 4181
5. Shchekin O B, Ahn J and Deppe D G 2002 Electron. Lett. 38 712
6. Kovsh A R et al 2002 Electron. Lett. 38 1104
7. Ribbat Ch, Sellin R L, Kaiander I, Hopfer F, Ledentsov N N, Bimberg D, Kovsh A R, Ustinov V M, Zhukov A E and Maximov M V 2003 Appl. Phys. Lett. 82 952
8. Deppe D G, Huffaker D L, Csutak S, Zou Z, Park G and Shchekin O B 1999 IEEE J. Quantum Electron. 35 1238
9. Kuntz M, Fiol G, Lammlin M, Schubert C, Kovsh A R, Jacob A, Umbach A and Bimberg D 2005 Electron. Lett. 41 244
10. Bimberg D, Ledentsov N N and Lott J A 2002 MRS Bull. 27 531
11. Yano M, Imai H and Tukusagawa M 1981 J. Appl. Phys. 52 3172
12. Ishikawa H and Suemune I 1994 IEEE Photonics Technol. Lett. 6 344
13. Ortsiefer M, Shau R, Böhm G, Köhler F and Amman M-C 2000 Appl. Phys. Lett. 76 2179
14. Gollub D, Moses S, Fischer M and Forchel A 2003 Electron. Lett. 39 777
15. Bank S R, Wistey M A, Goddard L L, Yuen H B, Lordi V and Harris J S Jr 2004 IEEE J. Quantum Electron. 40 656
16. Zhukov A E et al 2003 Semiconductors 37 1119
17. Ledentsov N N et al 2003 Electron. Lett. 39 1126
18. van der Ziel J P and Chand N 1990 J. Appl. Phys. 68 2731
19. Groenert M E, Leitz Ch W, Pitera A J, Yang V, Lee H, Ram R J and Fitzgerald E A 2003 J. Appl. Phys. 93 362
20. Mi Z, Bhattacharya P, Yang J and Pipe K P 2005 Electron. Lett. 41 742
21. Ledentsov N N et al 2005 Proc. SPIE 5624 335
22. Kuntz M et al 2004 New J. Phys. 6 181
23. Maximov M V et al 2004 Semiconductors 38 732
24. Karachinsky L Ya et al 2005 Electron. Lett. 41 478
25. Karachinsky L Ya et al 2005 Semiconductors 39 1415
26. Ouyang D, Heitz R, Ledentsov N N, Bognár S, Sellin R L, Ribbat Ch and Bimberg D 2002 Appl. Phys. Lett. 81 1546
27. Otsubo K, Hatori N, Ishida M, Okumura S, Akiyama T, Nakata Y, Ebe H, Sugawara M and Arakawa Y 2004 Japan. J Appl. Phys. 2 43 L1124
28. Olshansky R 1987 IEEE J. Quantum Electron. 23 1410