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Volumn 103, Issue 4, 2008, Pages

The influence of Schottky contact metals on the strain of AlGaN barrier layers

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CONTACTS; HETEROJUNCTIONS; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 40149107879     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2841328     Document Type: Article
Times cited : (26)

References (9)
  • 8
    • 1642619620 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.1650875.
    • Z. Lin, H. Kim, J. Lee, and W. Lu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1650875 84, 1585 (2004).
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 1585
    • Lin, Z.1    Kim, H.2    Lee, J.3    Lu, W.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.