In-implanted ZnO: Controlled degenerate surface layer

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1593-1596

  Look, D C ^a   Farlow, G C ^a   Yaqoob, F ^b   Vanamurthy, L H ^b   Huang, M ^b  

^a WRIGHT STATE UNIVERSITY   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HALL EFFECT; MAGNETIC FIELD EFFECTS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

CONDUCTIVE LAYER; HIGH CONCENTRATION; LOW MOBILITY; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; PHOTOLUMINESCENCE SPECTRUM; RUTHERFORD BACK-SCATTERING; SURFACE LAYERS; TEMPERATURE DEPENDENT; TWO LAYER MODEL; ZNO;

ZINC OXIDE;

EID: 79953839386     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3089375     Document Type: Conference Paper

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