Ag-N doped ZnO film and its p-n junction fabricated by ion beam assisted deposition

Applied Surface Science

Volumn 256, Issue 7, 2010, Pages 2289-2292

  Yan, Zhi ^a   Ma, Youpeng ^a   Deng, Peiran ^a   Yu, Zhishui ^a   Liu, Cheng ^b   Song, Zhitang ^b  

^a SHANGHAI UNIVERSITY OF ENGINEERING SCIENCE   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Electrical properties; Ion beam technology; Semiconductors; Thin films

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC RECTIFIERS; FABRICATION; HALL MOBILITY; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; ION BEAM ASSISTED DEPOSITION; ION BEAMS; IONS; METALLIC FILMS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILVER COMPOUNDS; SUPERCONDUCTING FILMS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ANNEALING PROPERTIES; ANNEALING TEMPERATURES; CURRENT RECTIFICATIONS; CURRENT VOLTAGE CURVE; ELECTRICAL MEASUREMENT; ION BEAM TECHNOLOGIES; P-N HOMOJUNCTIONS; RECTIFYING CHARACTERISTICS;

NITROGEN COMPOUNDS;

EID: 74149087186     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.10.054     Document Type: Article

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