Effect of pt and al electrodes on resistive switching properties of sputter-deposited cu-doped sio2 film

Japanese Journal of Applied Physics

Volumn 50, Issue 1 PART 3, 2011, Pages

  Li, Chia Jen ^a   Jou, Shyankay ^a   Chen, Wei Ling ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; BOTTOM ELECTRODES; ELECTRIC CONDUCTION; HIGH-RESISTANCE STATE; METAL-OXIDE; OXIDE LAYER; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SCHOTTKY EMISSIONS; SIO2 FILM; SPACE-CHARGE-LIMITED CURRENT; SWITCHING BEHAVIORS;

ALUMINUM; FILM PREPARATION; PLATINUM; SILICA; SWITCHING SYSTEMS;

COPPER;

EID: 79955155166     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.01BG08     Document Type: Conference Paper

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