Epitaxial PMN-PT thin films grown on LaNiO3/CeO2/YSZ buffered Si(001) substrates by pulsed laser deposition

Journal of the Electrochemical Society

Volumn 158, Issue 4, 2011, Pages

  Jiang, Juan ^a   Hur, Sung Gi ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; DISSIPATION FACTORS; ELECTRIC FIELD HYSTERESIS; ELECTRICAL PROPERTY; EPITAXIAL THIN FILMS; FERROELECTRIC PROPERTY; HIGH DIELECTRIC CONSTANTS; HIGH RESOLUTION X RAY DIFFRACTION; MICRO-STRUCTURAL; PMN-PT FILM; PT THIN FILMS; PURE PEROVSKITE STRUCTURE; PYROCHLORE PHASE; REMANENT POLARIZATION; SI (001) SUBSTRATE; STABILIZED ZIRCONIA; WORKING PRESSURES;

ELECTRIC FIELDS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FERROELECTRIC FILMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAD; PEROVSKITE; POLARIZATION; PULSED LASER DEPOSITION; PULSED LASERS; SILICON; VAPOR DEPOSITION; X RAY DIFFRACTION; YTTRIA STABILIZED ZIRCONIA; ZIRCONIA;

EPITAXIAL FILMS;

EID: 79955132368     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3548534     Document Type: Article

References (33)

1. J. F. Scott, P. Araujo, and A. Carlos, Science, 246, 1400 (1989). 10.1126/science.246.4936.1400 10.1126/science.246.4936.1400
2. A. R. Chaudhuri, P. Mandal, S. B. Krupanidhi, and A. Sundaresan, Solid State Commun., 148, 566 (2008). 10.1016/j.ssc.2008.09.049 10.1016/j.ssc.2008.09. 049
3. J. Yu, X. J. Meng, J. L. Sun, Z. M. Huang, and J. H. Chu, J. Appl. Phys., 96, 2792 (2004).
4. Y. L. Lu, G. H. Jin, M. Cronin-Golomb, S. W. Liu, H. Jiang, F. L. Wang, J. Zhao, S. Q. Wang, and A. J. Drehman, Appl. Phys. Lett., 72, 2927 (1998). 10.1063/1.121496 10.1063/1.121496 (Pubitemid 128671641)
5. R. Ramesh and D. G. Schlom, Science, 296, 1975 (2002). 10.1126/science.1072855 10.1126/science.1072855 (Pubitemid 34627508)
6. R. Herdier, M. Detalle, D. Jenkins, D. Remiens, D. Grebille, and R. Bouregba, J.Cryst. Growth, 311, 123 (2008). 10.1016/j.jcrysgro.2008.10.070 10.1016/j.jcrysgro.2008.10.070
7. N. J. Donnelly, G. Catalan, C. Morros, R. M. Bowman, and J. M. Gregg, J. Appl. Phys., 93, 9924 (2003). 10.1063/1.1574181 10.1063/1.1574181
8. A. R. Chaudhuri, S. B. Krupanidhi, P. Mandal, and A. Sundaresan, J. Appl. Phys., 106, 054103 (2009). 10.1063/1.3211315 10.1063/1.3211315
9. M. Feng, W. Wang, H. Ke, J. C. Rao, and Y. Zhou, J. Alloys Compd., 495, 154 (2010). 10.1016/j.jallcom.2010.01.109 10.1016/j.jallcom.2010.01.109
10. R. Haakenaasen, D. K. Fork, and J. A. Golovchenko, Appl. Phys. Lett., 64, 1573 (1994). 10.1063/1.111843 10.1063/1.111843
11. T. Kiguchi, N. Wakiya, K. Shinozaki, and T. J. Konno, Mater. Sci. Eng., B, 161, 160 (2009). 10.1016/j.mseb.2009.01.015 10.1016/j.mseb.2009.01.015
12. A. Vorobiev, P. Rundqvist, K. Khamchane, and S. Gevorgian, J. Eur. Ceram. Soc., 23, 2711 (2003). 10.1016/S0955-2219(03)00137-7 10.1016/S0955-2219(03) 00137-7 (Pubitemid 37065649)
13. F. Snchez, C. Ferrater, X. Alcobé, J. Bassas, M. V. Garca-Cuenca, and M. Varela, Thin Solid Films, 384, 200 (2001). 10.1016/S0040-6090(00)01876-9 10.1016/S0040-6090(00)01876-9 (Pubitemid 32875142)
14. S. D. Bu, M. K. Lee, C. B. Eom, W. Tian, X. Q. Pan, S. K. Streiffer, and J. J. Krajewski, Appl. Phys. Lett., 79, 3482 (2001). 10.1063/1.1414293 10.1063/1.1414293
15. Y. W. Li, Z. G. Hu, F. Y. Yue, G. Y. Yang, W. Z. Shi, X. J. Meng, J. L. Sun, and J. H. Chu, Appl. Phys. Lett., 91, 232912 (2007).
16. C. Tantigate, J. Lee, and A. Safari, Appl. Phys. Lett., 66, 1611 (1995). 10.1063/1.113868 10.1063/1.113868
17. D. S. Tsvetkov, A. Y. Zuev, A. I. Vylkov, and A. N. Petrov, Solid State Ionics, 178, 1458 (2007). 10.1016/j.ssi.2007.08.005 10.1016/j.ssi.2007.08.005 (Pubitemid 47633702)
18. F. Snchez, C. Ferrater, X. Alcobe, J. Bassas, M. V. Garca-Cuenca, and M. Varela, Thin Solid Films, 384, 200 (2001). 10.1016/S0040-6090(00)01876-9 10.1016/S0040-6090(00)01876-9 (Pubitemid 32875142)
19. B. H. Kim, O. Sakurai, N. Wakiya, and N. Mizutani, Mater. Res. Bull., 46, 657 (1997).
20. Y. Li and K. Tanabe, J. Appl. Phys., 83, 7744 (1998).
21. R. Aguiar, V. Trtik, F. Snchez, C. Ferrater, and M. Varela, Thin Solid Films, 304, 225 (1997). 10.1016/S0040-6090(97)00201-0 10.1016/S0040-6090(97) 00201-0
22. T. W. Chiu, N. Wakiya, K. Shinozaki, and N. Mizutani, Thin Solid Films, 426, 62 (2003). 10.1016/S0040-6090(02)01304-4 10.1016/S0040-6090(02)01304-4
23. A. K. Jonscher, Physics of Thin Films, Vol. 2, p. 205, Academic, New York (1980).
24. X. H. Zhu, E. Defay, A. Suhm, E. Fribourg-blanc, and M. Aid, Appl. Phys. Lett., 94, 122906 (2009).
25. F. Wu, X. M. Li, W. D. Yu, X. D. Gao, and X. Zhang, Appl. Phys. A., 88, 781 (2007).
26. T. Lin, X. J. Meng, J. L. Sun, J. H. Ma, and J. H. Chu, Appl. Phys. A., 81, 1025 (2005). 10.1007/s00339-004-2905-6 10.1007/s00339-004-2905-6 (Pubitemid 41202978)
27. S. W. Choi, T. R. Shrout, S. J. Jang, and A. S. Bhalla, Ferroelectrics, 100, 29 (1989). 10.1080/00150198908007897 10.1080/00150198908007897
28. R. Zhang, B. Jiang, and W. Cao, J. Appl. Phys., 90, 3471 (2001).
29. F. K. Chai, J. R. Brews, R. D. Schrimpf, and D. P. Birnie, J. Appl. Phys., 82, 2505 (1997).
30. T. Kawakubo, K. Abe, S. Komatsu, K. Sano, N. Yanase, and H. Mochizuki, IEEE Electron Device Lett., 18, 529 (1997). 10.1109/55.641435 10.1109/55.641435
31. J. Lee and R. Ramesh, Appl. Phys. Lett., 68, 484 (1996).
32. R. Thomas, S. Mochizuki, T. Mihara and T. Ishida, Thin Solid Films, 413, 65 (2002). 10.1016/S0040-6090(02)00354-1 10.1016/S0040-6090(02)00354-1 (Pubitemid 34772302)
33. H. Y. Cheung, F. F. Hau, J. Wang, and K. H. Wong, Ferroelectrics, 260, 219 (2001). 10.1080/00150190108016020 10.1080/00150190108016020