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Volumn 260, Issue 1, 2001, Pages 219-224
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Heteroepitaxial growth of Pb(Mg1/3Nb2/3)O 3-PbTiO3 thin films for integrated devices
a
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Author keywords
ferroelectrics; PLD
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Indexed keywords
AMBIENT OXYGEN;
BOTTOM ELECTRODES;
CRYSTALLINITIES;
ELECTRICAL MEASUREMENT;
FERROELECTRICS;
HETEROEPITAXIAL GROWTH;
HETEROEPITAXIAL RELATIONSHIPS;
INTEGRATED DEVICE;
LATTICE-MATCHED;
MGO SINGLE CRYSTALS;
MGO(1 0 0);
OPTIMUM CONDITIONS;
PLD;
PMN-PT FILM;
POST ANNEALING;
PT(100);
PULSED LASER;
PYROCHLORES;
SI(1 0 0);
STRUCTURAL CHARACTERIZATION;
STRUCTURAL QUALITIES;
SUBSTRATE TEMPERATURE;
X RAY DIFFRACTOMETRY;
CONDUCTIVE FILMS;
DEPOSITION;
EPITAXIAL GROWTH;
FERROELECTRIC FILMS;
FERROELECTRIC MATERIALS;
FERROELECTRIC THIN FILMS;
LEAD;
OXYGEN;
PULSED LASER DEPOSITION;
SILICON WAFERS;
SINGLE CRYSTALS;
TITANIUM NITRIDE;
X RAY DIFFRACTION ANALYSIS;
EPITAXIAL FILMS;
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EID: 78649620548
PISSN: 00150193
EISSN: 15635112
Source Type: Journal
DOI: 10.1080/00150190108016020 Document Type: Article |
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Times cited : (2)
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References (13)
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