Highly (1 1 1)-oriented and pyrochlore-free PMN-PT thin films derived from a modified sol-gel process

Journal of Alloys and Compounds

Volumn 495, Issue 1, 2010, Pages 154-157

  Feng, M ^a   Wang, W ^a   Ke, H ^a   Rao, J C ^a   Zhou, Y ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Orientation; Perovskite phase; PMN PT; Sol gel processes; Thin films

Indexed keywords

ANNEALED FILMS; ANNEALING TEMPERATURES; APPLIED ELECTRIC FIELD; COERCIVE FIELD; CRACK-FREE SURFACES; MG CONTENT; MODIFIED SOL-GEL PROCESS; ORIENTATION; PACKED GRAINS; PEROVSKITE PHASE; PREFERRED ORIENTATIONS; PROCESSING PARAMETERS; PT THIN FILMS; PURE PEROVSKITE PHASE; PYROCHLORE PHASE; PYROCHLORES; REMANENT POLARIZATION; ROOM TEMPERATURE; SEM; SI SUBSTRATES; THIN-FILM DEPOSITIONS;

ANNEALING; DEPOSITION; ELECTRIC FIELDS; FERROELECTRIC FILMS; GELS; HYSTERESIS; HYSTERESIS LOOPS; NANOSTRUCTURED MATERIALS; OXIDE MINERALS; PEROVSKITE; PHOTOTRANSISTORS; SOL-GELS; SOLS; THIN FILMS; X RAY DIFFRACTION;

SOL-GEL PROCESS;

EID: 77949479851     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.01.109     Document Type: Article

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