Ultralow dielectric losses in pyrochlore films of the PbO-MgO- Nb 2O5 - TiO2 system

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Zhu, X H ^a   Defa, E ^a   Suhm, A ^a   Fribourg Blanc, E ^a   Ad, M ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC LOSSES; EPITAXIAL GROWTH; LEAD; NIOBIUM; OXIDE MINERALS; PEROVSKITE; PLATINUM; THIN FILMS;

HIGH DIELECTRIC CONSTANTS; LOSS TANGENTS; LOW DIELECTRIC LOSS; PMNT THIN FILMS; POST-DEPOSITION ANNEALING; PYROCHLORE; PYROCHLORE FILMS; PYROCHLORE PHASE; RADIO-FREQUENCY MAGNETRON SPUTTERING; SILICON SUBSTRATES; STRUCTURAL FEATURES; ULTRA-LOW DIELECTRICS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 63549126116     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3106107     Document Type: Article

References (27)

1. L. E. Cross, Ferroelectrics 76, 241 (1987). 0015-0193
2. S. E. Park and T. R. Shrout, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 0885-3010 10.1109/58.655639 44, 1140 (1997).
3. Z. Kutnjak, J. Petzelt, and R. Blinc, Nature (London) 0028-0836 10.1038/nature04854 441, 956 (2006).
4. J. -P. Maria, W. Hackenberger, and S. Trolier-McKinstry, J. Appl. Phys. 0021-8979 10.1063/1.368809 84, 5147 (1998).
5. S. D. Bu, M. K. Lee, C. B. Eom, W. Tian, X. Q. Pan, S. K. Streiffer, and J. J. Krajewski, Appl. Phys. Lett. 0003-6951 10.1063/1.1414293 79, 3482 (2001).
6. G. R. Bai, S. K. Streiffer, P. K. Baumann, O. Auciello, K. Ghosh, S. Stemmer, A. Munkholm, C. Thompson, R. A. Rao, and C. B. Eom, Appl. Phys. Lett. 0003-6951 10.1063/1.126538 76, 3106 (2000).
7. S. Jaydeep, S. Yadav, B. P. Malla, A. R. Kulkarni, and N. Venkatramani, Appl. Phys. Lett. 0003-6951 10.1063/1.1517175 81, 3840 (2002).
8. Y. Wang, Y. L. Cheng, K. C. Cheng, H. L. W. Chan, C. L. Choy, and Z. R. Liu, Appl. Phys. Lett. 0003-6951 10.1063/1.1784517 85, 1580 (2004).
9. A. Y. Liu, X. J. Meng, J. Q. Xue, J. L. Sun, J. Chen, and J. H. Chu, Appl. Phys. Lett. 0003-6951 10.1063/1.1999859 87, 072903 (2005).
10. M. Detalle, D. Ŕmiens, G. Wang, P. Roussel, and B. Dkhil, Appl. Phys. Lett. 0003-6951 10.1063/1.2749859 91, 032903 (2007).
11. J. K. Lee, D. Park, D. S. Cheong, J. W. Park, and C. S. Park, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.582402 18, 1659 (2000).
12. A. Mergen and W. E. Lee, J. Eur. Ceram. Soc. 0955-2219 10.1016/S0955-2219(96)00187-2 17, 1033 (1997).
13. X. H. Zhu, D. N. Zheng, W. Peng, J. G. Zhu, X. W. Yuan, J. Li, M. J. Zhang, Y. F. Chen, H. Y. Tian, and X. P. Xu, Mater. Lett. 0167-577X 10.1016/j.matlet.2004.06.052 58, 3591 (2004).
14. Z. Huang, Q. Zhang, and R. W. Whatmore, J. Appl. Phys. 0021-8979 10.1063/1.370944 86, 1662 (1999).
15. X. H. Zhu, B. Guigues, E. Defa, and M. Ad, J. Appl. Phys. 0021-8979 10.1063/1.2999638 104, 074118 (2008).
16. A. K. Tagantsev, V. O. Sherman, K. F. Astafiev, J. Venkatesh, and N. Setter, J. Electroceram. 1385-3449 10.1023/B:JECR.0000015661.81386.e6 11, 5 (2003).
17. P. Groves, J. Phys. C 0022-3719 10.1088/0022-3719/19/15/025 19, 2811 (1986).
18. S. S. Kim and W. J. Kim, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro. 2005.04.033 281, 432 (2005).
19. F. M. Bai, J. F. Li, and D. Viehland, Appl. Phys. Lett. 0003-6951 10.1063/1.1793353 85, 2313 (2004).
20. W. Z. Li, J. M. Xue, Z. H. Zhou, J. Wang, H. Zhu, and J. M. Miao, Ceram. Int. 0272-8842 10.1016/j.ceramint.2003.12.093 30, 1539 (2004).
21. E. Defa, D. Wolozan, J. P. Blanc, E. Serret, P. Garrec, S. Verrun, D. Pellissier, P. Delpech, J. Guillan, B. Andŕ, L. Ulmer, M. Ad, and P. Ancey, Solid-State Electron. 0038-1101 10.1016/j.sse.2007.09.036 51, 1624 (2007).
22. H. Hu, C. X. Zhu, X. F. Yu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, M. B. Yu, X. Y. Liu, and J. Winkler, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2002.807703 24, 60 (2003).
23. L. F. Ji, Y. J. Jiang, W. Wang, and Z. L. Yu, Appl. Phys. Lett. 0003-6951 10.1063/1.1784539 85, 1577 (2004).
24. J. Lu and S. Stemmer, Appl. Phys. Lett. 0003-6951 10.1063/1.1613036 83, 2411 (2003).
25. W. Ren, S. Trolier-McKinstry, C. A. Randall, and T. R. Shrout, J. Appl. Phys. 0021-8979 10.1063/1.1328408 89, 767 (2001).
26. J. G. Cheng, J. Wang, T. Dechakupt, and S. Trolier-McKinstry, Appl. Phys. Lett. 0003-6951 10.1063/1.2140071 87, 232905 (2005).
27. The crystallization of PMNT thin films in pure pyrochlore phase at temperatures below 450 °C has been obtained by using a modified set of sputtering conditions.