Effect of LaNiO3 buffer layers on the structure and electrical properties of sol-gel-derived Pb(Mg1/3Nb2/3)O 3PbTiO3 thin films

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 5, 2005, Pages 1025-1028

  Lin, T ^a   Meng, X J ^a   Sun, J L ^a   Ma, J H ^a   Chu, J H ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; ELECTROCHEMICAL ELECTRODES; LEAD COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; PEROVSKITE; PLATINUM; SOL-GELS;

BUFFER LAYERS; PEROVSKITE PHASE; PYROCHLORE PHASE;

LANTHANUM COMPOUNDS;

EID: 23944512789     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2905-6     Document Type: Article

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