Domain switching and spatial dependence of permittivity in ferroelectric thin films

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2505-2516

  Chai, Francis K ^a   Brews, J R ^b   Schrimpf, R D ^c   Birnie III, D P ^b  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^b University of Arizona   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; FILM GROWTH; LEAD COMPOUNDS; MATHEMATICAL MODELS; NIOBIUM; PERMITTIVITY; POLARIZATION; THIN FILMS;

ELECTRICAL DOPING; LEAD ZIRCONATE TITANATE;

FERROELECTRIC MATERIALS;

EID: 0031233133     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365764     Document Type: Article

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