A study on the epitaxy nature and properties of 3 wt% ga-doped epitaxial ZnO thin film on Al2O3 (0 0 0 1) substrates

Journal of Crystal Growth

Volumn 322, Issue 1, 2011, Pages 51-56

  Shin, Seung Wook ^a   Lee, Gyoung Hoon ^b   Moholkar, A V ^c   Moon, Jong Ha ^b   Heo, Gi Seok ^d   Kim, Tae Won ^d   Kim, Jin Hyeok ^b   Lee, Jeong Yong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chonnam National University   (South Korea)

^c SHIVAJI UNIVERSITY   (India)

^d Korea Institute of Industrial Technology   (South Korea)

Author keywords

A1. X ray diffraction; A2. Single crystal growth; B1. Sapphire; B2. Semiconducting materials; B3. Solar cells

Indexed keywords

A2. SINGLE CRYSTAL GROWTH; B1. SAPPHIRE; B3.SOLAR CELL; BAND GAPS; CRYSTALLINITIES; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; GA-DOPED; GA-DOPED ZNO; HALL MEASUREMENTS; HEXAGONAL WURTZITE; OPTICAL AND ELECTRICAL PROPERTIES; ORIENTATION RELATIONSHIP; POLYCRYSTALLINE; RF-MAGNETRON SPUTTERING; SEMICONDUCTING MATERIALS; TEM; UV VISIBLE SPECTROSCOPY; VISIBLE REGION; XRD; ZNO THIN FILM;

CRYSTALLIZATION; DIFFRACTION; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GROWTH TEMPERATURE; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; SAPPHIRE; SINGLE CRYSTALS; SOLAR CELLS; X RAY DIFFRACTION; X RAYS; ZINC OXIDE; ZINC SULFIDE;

EPITAXIAL FILMS;

EID: 79954612464     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.03.012     Document Type: Article

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