High-resolution field effect sensing of ferroelectric charges

Nano Letters

Volumn 11, Issue 4, 2011, Pages 1428-1433

  Ko, Hyoungsoo ^a,b   Ryu, Kyunghee ^c   Park, Hongsik ^a,d   Park, Chulmin ^a,b   Jeon, Daeyoung ^a,e   Kim, Yong Kwan ^a,b   Jung, Juhwan ^a,b   Min, Dong Ki ^a,b   Kim, Yunseok ^f   Lee, Ho Nyung ^g   Park, Yoondong ^a,b   Shin, Hyunjung ^c   Hong, Seungbum ^a,h  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Kookmin University   (South Korea)

^d Brown University   (United States)

^e Korea University   (South Korea)

^f MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^g OAK RIDGE NATIONAL LABORATORY   (United States)

^h ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Charge imaging; ferroelectric; field effect; resistive probe; scanning probe microscopy

Indexed keywords

CHARGE IMAGING; DENSITY RESOLUTION; ELECTRIC FORCE; ELECTRONIC BEHAVIORS; ELECTRONIC DEVICE; ELECTROSTATIC FORCE MICROSCOPY; EMBEDDED PROBES; FERROELECTRIC; FERROELECTRIC DOMAINS; FIELD EFFECTS; HIGH RESOLUTION; KELVIN PROBE FORCE MICROSCOPY; LENGTH SCALE; NANO SCALE; POLAR MATERIALS; RESISTIVE PROBES; ROOM TEMPERATURE; TEMPORAL RESOLUTION; TIME-SCALES; TRANSPORT PHENOMENA;

CHARGED PARTICLES; ELECTRIC FORCE MICROSCOPY; ELECTROSTATIC FORCE; FERROELECTRIC MATERIALS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; SCANNING PROBE MICROSCOPY; SURFACE CHARGE; SURFACES;

PROBES;

IRON; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD; METHODOLOGY; MICROMANIPULATION; RADIATION EXPOSURE; STATIC ELECTRICITY;

COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; IRON; MICROMANIPULATION; MODELS, CHEMICAL; NANOSTRUCTURES; STATIC ELECTRICITY;

EID: 79954562226     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl103372a     Document Type: Article

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