Scanning single-electron transistor microscopy: Imaging individual charges

Science

Volumn 276, Issue 5312, 1997, Pages 579-582

  Yoo, M J ^a,b   Fulton, T A ^a   Hess, H F ^a   Willett, R L ^a   Dunkleberger, L N ^a   Chichester, R J ^a   Pfeiffer, L N ^a   West, K W ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC FIELDS; HETEROJUNCTIONS; IMAGING TECHNIQUES; PROBES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSISTORS;

FLUCTUATIONS; SINGLE ELECTRON TRANSISTOR SCANNING ELECTROMETER; SURFACE CHARGE IMAGING;

ELECTROMETERS;

ARTICLE; CHEMICAL STRUCTURE; ELECTRIC FIELD; ELECTRON MICROSCOPY; ELECTRON TRANSPORT; IMAGE ANALYSIS; MATHEMATICAL COMPUTING; PRIORITY JOURNAL; SCINTISCANNING;

EID: 1842337502     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.276.5312.579     Document Type: Article

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26. The plot is actually of the induced charge divided by the fixed capacitance measured over the 2DEG. Off of the edge, the capacitance drops, but this variance was not incorporated here.
27. We thank G. Baraff, A. M. Chang, J. P. Eisenstein, B. I. Halperin, P. Mitra, and A. Yacoby for useful discussions.