Silicon-based field-effect-transistor cantilever for surface potential mapping

Applied Physics Letters

Volumn 83, Issue 2, 2003, Pages 386-388

  Suh, Moon Sunk ^a   Choi, J H ^b   Kuk, Young ^b   Jung, J ^c  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Seoul National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; OPTICAL RESOLVING POWER; SCANNING; SILICON; SILICON ON INSULATOR TECHNOLOGY;

SURFACE POTENTIAL MAPPING;

FIELD EFFECT TRANSISTORS;

EID: 0042769283     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1591231     Document Type: Article

References (8)

1. C. C. Ting, Y. H. Shin, and J. G. Hwu, IEEE Trans. Electron Devices 49, 179 (2002).
2. Y. Martin, D. W. Abraham, and H. K. Wickramasighe, Appl. Phys. Lett. 52, 1103 (1988).
3. C. C. Williams, W. P. Hough, and S. A. Rishton, Appl. Phys. Lett. 55, 203 (1989).
4. C. J. Kang, C. K. Kim, J. D. Lera, Y. Kuk, K. M. Mang, J. G. Lee, K. S. Suh, and C. C. Williams, Appl. Phys. Lett. 71, 1546 (1997).
5. G. H. Buh, H. J. Chung, C. K. Kim, J. H. Yi, I. T. Yoon, and Y. Kuk, Appl. Phys. Lett. 77, 106 (2000).
6. L. H. Chen, M. A. Topinka, B. J. Leroy, R. M. Westervelt, K. D. Maranowski, and A. C. Gossard, Appl. Phys. Lett. 79, 1202 (2001).
7. L. Gurevich, L. Canali, and L. P. Kouwenhoven, Appl. Phys. Lett. 76, 384 (2000).
8. M. J. Yoo, T. A. Fulton, H. F. Hess, R. L. Willett, L. N. Dunkleberger, R. J. Chichester, L. N. Pfeiffer, and K. W. West, Science 276, 579 (1997).